US Patent Issued to Semiconductor Energy Laboratory on Dec. 2 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,475, issued on Dec. 2, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Shunpei Yamazaki (Tokyo), Yoshihiro Komatsu (Kanagawa, Japan) and Toshikazu Ohno (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having high reliability is provided. The semiconductor device includes a transistor and an insulator placed so as to surround the transistor; the insulator has a barrier property against hydrogen; the transistor includes an oxide and a conductor, the conductor includes nitrogen and a metal; the co...