US Patent Issued to Semiconductor Energy Laboratory on Aug. 25 for "Method of fabricating display device using sacrificial film" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,961, issued on Aug. 25, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Method of fabricating display device using sacrificial film" was invented by Shunpei Yamazaki (Tokyo), Kenichi Okazaki (Atsugi, Japan), Yuichi Yanagisawa (Atsugi, Japan), Naoto Goto (Tochigi, Japan) and Shun Mashiro (Oyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a display device with high resolution is provided. A display device having both high display quality and high resolution is provided. The method of fabricating a display device includes steps of forming a first EL film and a first sacrificial film over a fi...