US Patent Issued to Semiconductor Energy Laboratory on April 14 for "Method for manufacturing light-emitting element and light-emitting device using photolithography technique" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,650, issued on April 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Method for manufacturing light-emitting element and light-emitting device using photolithography technique" was invented by Shunpei Yamazaki (Setagaya, Japan), Sachiko Kawakami (Atsugi, Japan), Nobuharu Ohsawa (Zama, Japan), Yuji Iwaki (Isehara, Japan), Ryota Hodo (Atsugi, Japan), Kentaro Sugaya (Atsugi, Japan), Shinya Sasagawa (Chigasaki, Japan), Takahiro Fujie (Isehara, Japan), Yoshikazu Hiura (Atsugi, Japan), Toshiki Sasaki (Kawasaki, Japan), Takeyoshi Watabe (Atsugi, Japan) and Kunihiko Suzuki (Isehara, Japan).

According to the abstract* released by the U.S. Patent & Trademark...