US Patent Issued to SEMICONDUCTOR COMPONENTS INDUSTRIES on Oct. 14 for "Method for forming transistor devices having source region segments and body region segments" (Japanese, American Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,257, issued on Oct. 14, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).

"Method for forming transistor devices having source region segments and body region segments" was invented by Takashi Ogura (Oizumi-machi, Japan), Takashi Hiroshima (Ota, Japan), Toshimitsu Taniguchi (Aizuwakamatsu, Japan) and Peter A. Burke (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the fi...