US Patent Issued to SEMICONDUCTOR COMPONENTS INDUSTRIES on March 17 for "Nanophotonic global shutter sensor" (California, Idaho Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,759, issued on March 17, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).

"Nanophotonic global shutter sensor" was invented by Bartosz Piotr Banachowicz (San Jose, Calif.) and Swarnal Borthakur (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Image sensor pixels, imaging systems, and methods for constructing image sensor pixels. The image sensor pixel includes a photosensitive region, a charge storage node, a deep trench isolation, and a spectral router. The charge storage node is positioned on a back-side of the photosensitive region. The deep trench isolation extends from a front-side of the photosensitive ...