US Patent Issued to SEMICONDUCTOR COMPONENTS INDUSTRIES on Jan. 20 for "Global shutter image sensor with parasitic light leakage correction" (California, Idaho Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,089, issued on Jan. 20, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).

"Global shutter image sensor with parasitic light leakage correction" was invented by Karishmae Kadrager (Meridian, Idaho), Kyle Thomas (San Francisco) and Radu Ispasoiu (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Global shutter image sensors, imaging systems, and methods for operating global shutter image sensor. The global shutter image sensor includes a pixel array and a controller. The pixel array includes a correction pixel and a plurality of image pixels positioned around the correction pixel. The correction pixel and each ...