ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,555,632, issued on Feb. 17, was assigned to SEMIBRAIN INC. (Seongnam-si, South Korea).
"High density embedded flash cell array structure" was invented by Dong-Hyuk Chae (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention discloses an embedded flash memory cell array structure characterized by improving integration by reducing the pitch of the cell layout in the row direction by sharing a source or drain with an adjacent control gate transistor."
The patent was filed on Feb. 12, 2024, under Application No. 18/439,744.
*For further information, including images, charts and tables, please visit: http://patft.uspto.gov...