ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,673, issued on Nov. 3, was assigned to SEMES Co. LTD. (Cheonan-si, South Korea).
"Method of forming semiconductor device and substrate processing system for forming semiconductor device" was invented by Hanglim Lee (Cheonan-si, South Korea), Minyoung Kim (Hwaseong-si, South Korea) and Thomas Jongwan Kwon (Seongnam-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes pretreating a semiconductor substrate including at least one buried power rail for power transmission, based on chemical reaction by supplying a pretreatment gas for surface treatment onto a backside of the semiconductor substr...