US Patent Issued to Schottky LSI on March 3 for "Integration of FinFETs and schottky diodes on a substrate" (Nevada Inventor)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,635, issued on March 3, was assigned to Schottky LSI Inc. (Mountain View, Calif.).

"Integration of FinFETs and schottky diodes on a substrate" was invented by Pierre Dermy (Reno, Nev.).

According to the abstract* released by the U.S. Patent & Trademark Office: "This application is directed to integrating a field-effect transistor (FinFET) and a Schottky barrier diode on a substrate. A first fin structure and a second fin structure are formed on the substrate. The first fin structure includes a channel portion extending to two stressor portions on two opposite sides of the channel portion, and the second fin structure includes a junction portion. A source structure and a drain str...