ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,571, issued on April 21, was assigned to SANKEN ELECTRIC Co. LTD. (Niiza, Japan).
"Diode, power reception device and power transmission system" was invented by Hiroji Kawai (Oyama, Japan), Shuichi Yagi (Oyama, Japan) and Hironobu Narui (Oyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "This diode has an undoped GaN layer 11, an AlxGa1-xN layer (0greater thanxgreater than1) 12 thereon, a Mg-doped p-type InyGa1-yN layer (0greater thanygreater than1) 13 having an island-like shape thereon, a metal electrode 14 thereon, an anode electrode 15 which is provided on the AlxGa1-xN layer 12 and which is electrically connected to the metal electrode...