US Patent Issued to SANGDEST MICROELECTRONICS (NANJING) on Dec. 30 for "Semiconductor device with self-aligned channel and self-aligned contact region, and method of preparing the same" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,966, issued on Dec. 30, was assigned to SANGDEST MICROELECTRONICS (NANJING) Co. LTD. (Nanjing, China).

"Semiconductor device with self-aligned channel and self-aligned contact region, and method of preparing the same" was invented by Tomasz Sledziewski (Nanjing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method of making is described. A substrate (1) topped by a buffer layer (2) of a first conductivity type and one or more epitaxial layers (3) of the same type. In the topmost epitaxial layer, a body region (4) of a second conductivity type is formed, along with a source region (5) of the first conductivity type. ...