US Patent Issued to Sandisk Technologies on Sept. 8 for "Read retry with physical defect judgement" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,657, issued on Sept. 8, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Read retry with physical defect judgement" was invented by Xuan Tian (Shanghai), Liang Li (Shanghai) and Ming Wang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technology for retrying failed reads of non-volatile memory such as NAND. The memory system retries the failed read using one or more different read techniques than the failed read until the read is successful. The memory system may use different read reference voltages for read retries than the read reference voltages used in the failed read. After a successful read retry the memory system dete...