ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,650, issued on Sept. 8, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"In-place read refresh techniques for nonvolatile memory devices" was invented by Wei Cao (Fremont, Calif.), Jiahui Yuan (Fremont, Calif.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device includes a memory block that has an array of memory cells that are arranged in a plurality of word lines. The memory device also has control circuitry that is configured to program the memory cells of a selected word line in at least one program loop. The at least one program loop includes a programming pulse and a verify operati...