US Patent Issued to Sandisk Technologies on Sept. 29 for "Bipolar decoders for nonvolatile memory with spike attenuation for threshold selector switches" (California, Idaho Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,520, issued on Sept. 29, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Bipolar decoders for nonvolatile memory with spike attenuation for threshold selector switches" was invented by Nicolas Irizarry (Folsom, Calif.), Nathan Franklin (Belmont, Calif.), Ward Parkinson (Boise, Idaho) and Jaydip Patel (Folsom, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "For MRAM and other memory cell technologies that use threshold selector switches such as ovonic threshold switches, when accessing a selected memory cell, such as for a read, the voltage across the memory cell needs to be sufficient to turn on the threshold selector switch. T...