US Patent Issued to Sandisk Technologies on Sept. 23 for "Three-dimensional memory device and method of making thereof using sacrificial material regrowth" (California Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,267, issued on Sept. 23, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device and method of making thereof using sacrificial material regrowth" was invented by Bing Zhou (San Jose, Calif.), Senaka Kanakamedala (San Jose, Calif.) and Raghuveer S. Makala (Campbell, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first-tier alternating stack of first-tier insulating layers and first-tier sacrificial material layers is formed over a substrate. A first-tier memory opening is formed, and is filled with a first-tier sacrificial memory opening fill structure. A second-tier alternating stack of second-tier i...