US Patent Issued to Sandisk Technologies on Sept. 22 for "Three-dimensional memory device including capped molybdenum word lines and method of making the same" (California Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,620, issued on Sept. 22, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including capped molybdenum word lines and method of making the same" was invented by Rahul Sharangpani (Fremont, Calif.), Raghuveer S. Makala (Campbell, Calif.) and Kartik Sondhi (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, and memory opening fill structures located within the memory openings. Each of the memory opening fill...