US Patent Issued to Sandisk Technologies on Sept. 15 for "Memory device with alternate bit line sensing" (California Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,737,119, issued on Sept. 15, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Memory device with alternate bit line sensing" was invented by Xiang Yang (Santa Clara, Calif.), Deepanshu Dutta (Fremont, Calif.) and Masaaki Higashitani (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device includes a memory block with an array of memory cells. The memory cells are arranged in a plurality of word lines and in a plurality of memory holes. The plurality of memory holes are in electrical communication with respective bit lines of a plurality of bit lines. The plurality of bit lines includes a plurality of active bit l...