US Patent Issued to Sandisk Technologies on Sept. 15 for "Magnetic tunnel junction with dual reference layers having parallel magnetization directions and methods for operating the same" (California Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,306, issued on Sept. 15, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Magnetic tunnel junction with dual reference layers having parallel magnetization directions and methods for operating the same" was invented by Goran Mihajlovic (San Jose, Calif.) and Wonjoon Jung (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive memory cell includes a first electrode; a second electrode; and a layer stack located between the first electrode and the second electrode and comprising, from one end to another, a first reference layer, a first tunnel barrier layer, a free layer, a second tunnel barrier layer, and a ...