US Patent Issued to Sandisk Technologies on Nov. 3 for "Three-dimensional memory device including dielectric wall compartments for word line contact via structures and methods of forming the same" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,290, issued on Nov. 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including dielectric wall compartments for word line contact via structures and methods of forming the same" was invented by Makoto Koto (Yokkaichi, Japan) and Takayuki Maekura (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, where each of the memory opening fill structur...