US Patent Issued to Sandisk Technologies on Nov. 3 for "Die by die trimming of drain-side select gate threshold voltage to reduce cumulative read disturb" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,836, issued on Nov. 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Die by die trimming of drain-side select gate threshold voltage to reduce cumulative read disturb" was invented by Abhijith Prakash (Milpitas, Calif.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus and method of operation are provided. The apparatus includes drain-side select gate transistors for coupling to a drain-side of each of a plurality of memory holes of memory cells and configured to retain a transistor threshold voltage. The memory apparatus also includes a control means coupled to the drain-side selec...