US Patent Issued to Sandisk Technologies on March 31 for "Nonvolatile memory read with asymmetric read-pass voltages" (California Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,592,286, issued on March 31, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Nonvolatile memory read with asymmetric read-pass voltages" was invented by Yiwen Qian (Milpitas, Calif.) and Jiahui Yuan (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes control circuits configured to connect to a plurality of nonvolatile memory cells in NAND strings. The one or more control circuits are configured to apply read voltages on selected word lines to read selected memory cells while read-pass voltages are applied to unselected word lines. The read-pass voltages including a first Near Word Line (NWL) read-pass vo...