US Patent Issued to Sandisk Technologies on March 3 for "Three-dimensional memory device including stairless word line contact structures and method of making the same" (Japanese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,808, issued on March 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including stairless word line contact structures and method of making the same" was invented by Tomohiro Kubo (Yokkaichi, Japan) and Michiaki Sano (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, memory openings located in a memory array region and vertically extending through the alternating stack, memory opening fill structures located in the memory openings, and laterally-isolated contact via as...