US Patent Issued to Sandisk Technologies on March 24 for "Three-dimensional memory device including crack-resistant backside passivation structure and methods of forming the same" (Japanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,644, issued on March 24, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including crack-resistant backside passivation structure and methods of forming the same" was invented by Kota Funayama (Yokkaichi, Japan), Masayuki Hiroi (Yokkaichi, Japan) and Yu Saito (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, a three-dimensional array of memory elements embedded in the alternating stack, a dielectric material portion located adjacent to the alternating stack, connection...