US Patent Issued to Sandisk Technologies on March 24 for "Three-dimensional memory device containing composite word lines including a respective fluorine-free capping sublayer and methods of forming the same" (Japanese, American Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,209, issued on March 24, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device containing composite word lines including a respective fluorine-free capping sublayer and methods of forming the same" was invented by Yusuke Mukae (Nagoya, Japan), Tatsuya Hinoue (Yokkaichi, Japan), Raghuveer S. Makala (Campbell, Calif.) and Shungo Asaeda (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a memory device includes forming an alternating stack of insulating layers and sacrificial material layers over a substrate, forming memory openings through the alternating stack, forming memory...