ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,657, issued on March 24, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Nonvolatile memory with temperature-dependent sense time offsets for soft-bit read" was invented by Chengqing Hu (Milpitas, Calif.) and Henry Chin (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Control circuits configured to connect to a plurality of nonvolatile memory cells are configured to perform a soft-bit read of the plurality of nonvolatile memory cells by sensing the plurality of nonvolatile memory cells for a sense-time. The sense-time is obtained by adding a soft-read offset time to a hard-read sense time. The soft-read offset time is ...