US Patent Issued to Sandisk Technologies on June 23 for "Three-dimensional memory device including a Schottky source contact structure and methods for forming the same" (Japanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,618, issued on June 23, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including a Schottky source contact structure and methods for forming the same" was invented by Tatsuya Hinoue (Yokkaichi, Japan) and Makoto Koto (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers located on a semiconductor layer, a memory opening vertically extending through the alternating stack and the semiconductor layer, a memory opening fill structure located in the memory opening and containing a memor...