US Patent Issued to Sandisk Technologies on June 16 for "High voltage field effect transistors with superjunctions and method of making the same" (Japanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,256, issued on June 16, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"High voltage field effect transistors with superjunctions and method of making the same" was invented by Masashi Ishida (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field effect transistor includes a semiconductor channel having a doping of a first conductivity type, a gate structure overlying the semiconductor channel, a source region and a drain region, a source-side extension region including a source-side-extension plate portion and source-side-extension rail portions that overlie the source-side-extension plate portion, source-side count...