US Patent Issued to Sandisk Technologies on June 16 for "Cross temperature NAND read" (California Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,656,959, issued on June 16, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Cross temperature NAND read" was invented by Albert Bor Kai Chen (Milpitas, Calif.), Jiahui Yuan (Fremont, Calif.) and Sarath Puthenthermadam (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technology for dynamically updating read references levels in NAND memory. A memory system compensates for both cross-temperature (TempX) effects and data retention (DR) effects. The Vt of a NAND memory cell transistor may depend on the temperature, which leads to the TempX effect. The DR effect is due to a change in charge in the memory cell between programmin...