US Patent Issued to Sandisk Technologies on July 7 for "Three-dimensional memory device including horizontal semiconductor channels and methods of forming the same" (Japanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,414, issued on July 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including horizontal semiconductor channels and methods of forming the same" was invented by Takaaki Iwai (Nagoya, Japan), Shinsuke Yada (Yokkaichi, Japan), Tadashi Nakamura (Yokkaichi, Japan) and Hiroyuki Ogawa (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming three-dimensional memory device includes forming an alternating stack of insulating layers and semiconductor material layers over a substrate, and forming laterally alternating sequences of laterally-insulated electrode structures and dielectric ...