US Patent Issued to Sandisk Technologies on July 7 for "Pre-charge at read recovery clock from bit line side for sub-block one performance improvement" (American, Chinese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,675,397, issued on July 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Pre-charge at read recovery clock from bit line side for sub-block one performance improvement" was invented by Jiacen Guo (Cupertino, Calif.), Xiang Yang (Santa Clara, Calif.) and Ming Wang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus includes memory cells connected to word lines and configured to retain a threshold voltage corresponding to data states. The memory cells are disposed in memory holes defining channels. The memory cells form a block including a first sub-block and a second sub-block disposed vertically above the first su...