US Patent Issued to Sandisk Technologies on July 28 for "Non-volatile memory with leak tests" (Chinese, American Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,694,943, issued on July 28, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with leak tests" was invented by Xuan Tian (Shanghai), Liang Li (Shanghai) and Deepanshu Dutta (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory is configured to perform multiple leak tests integrated into a pre-erase process for a set (e.g., block) of non-volatile memory cells after the set of non-volatile memory cells have received programming. An inference circuit is configured to use results of the leak tests with a pre-trained model to predict whether the set of non-volatile memory cells will fail."

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