ALEXANDRIA, Va., July 28 -- United States Patent no. 12,693,932, issued on July 28, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Data storage device and method for generating read threshold voltages" was invented by Mohith Kumar N (Bengaluru, India), Raja Sivasankaran (Salem, India) and Darshan Pagariya (Gondia, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bit error rate (BER) estimation scan (BES) typically uses static read thresholds during the scan process. These fixed thresholds might not adapt to variations in memory cell characteristics, leading to suboptimal BER estimation and error correction. The embodiments presented herein can be used to address this problem by providin...