US Patent Issued to Sandisk Technologies on July 14 for "Three-dimensional memory device containing phosphorus-doped silicon oxide ion-gettering structures and methods of forming the same" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,777, issued on July 14, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device containing phosphorus-doped silicon oxide ion-gettering structures and methods of forming the same" was invented by Nobuyuki Fujimura (Yokkaichi, Japan), Tadashi Nakamura (Yokkaichi, Japan), Satoshi Shimizu (Yokkaichi, Japan) and Takumi Moriyama (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes a pair of alternating stacks of insulating layers and electrically conductive layers, where the pair of alternating stacks are laterally spaced from each other by a lateral isolation t...