US Patent Issued to Sandisk Technologies on Jan. 27 for "Three-dimensional memory device having controlled lateral isolation trench depth and methods of forming the same" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,489, issued on Jan. 27, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device having controlled lateral isolation trench depth and methods of forming the same" was invented by Masanori Tsutsumi (Yokkaichi, Japan), Keita Akasaki (Yokkaichi, Japan), Tomohiro Kubo (Yokkaichi, Japan), Shinsuke Yada (Yokkaichi, Japan) and Takaaki Iwai (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a lower source-level semiconductor layer, a source contact layer, and an upper source-level semiconductor layer, an alternating stack of insulating layers and electrically conductive layers, a memo...