US Patent Issued to Sandisk Technologies on Feb. 17 for "Non-volatile memory with adaptive dummy word line bias" (California Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,555,637, issued on Feb. 17, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with adaptive dummy word line bias" was invented by Yihang Liu (Santa Clara, Calif.), Xiaochen Zhu (Milpitas, Calif.), Peng Wang (San Jose, Calif.), Jie Liu (Milpitas, Calif.), Lito De La Rama (San Jose, Calif.), Feng Gao (Union City, Calif.) and Xiaoyu Yang (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile storage apparatus includes non-volatile memory cells, word lines connected to the non-volatile memory cells, and a control circuit connected to the word lines and the memory cells. The word lines include data wo...