US Patent Issued to Sandisk Technologies on Dec. 30 for "Non-volatile memory with enhanced early program termination mode for neighbor plane disturb" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,175, issued on Dec. 30, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with enhanced early program termination mode for neighbor plane disturb" was invented by Xuan Tian (Shanghai), Liang Li (Shanghai) and Vincent Yin (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile storage apparatus comprises memory cells organized into multiple planes. To prevent one plane from disturbing another plane while concurrently programming memory cells in a first plane and memory cells in a second plane, the system determines that the memory cells in the second plane are programming slower than the memory cells o...