US Patent Issued to Sandisk Technologies on Dec. 30 for "Method of making high aspect ratio openings in a semiconductor device using ion implanted regrown cladding mask" (California Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,366, issued on Dec. 30, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Method of making high aspect ratio openings in a semiconductor device using ion implanted regrown cladding mask" was invented by Bing Zhou (San Jose, Calif.), Kartik Sondhi (Milpitas, Calif.) and Senaka Kanakamedala (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of patterning a structure includes forming an alternating stack of first material layers and second material layers over a substrate, forming an etch mask material layer over the alternating stack, forming openings in an upper portion of the alternating stack by performing a firs...