US Patent Issued to Sandisk Technologies on Dec. 23 for "Three-dimensional memory device with laterally separated source select electrodes and methods of forming the same" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,414, issued on Dec. 23, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device with laterally separated source select electrodes and methods of forming the same" was invented by Shinsuke Yada (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes primary source side select gate electrodes located between word lines and bottom source side select gate electrodes. The primary source side select gate electrodes are laterally separated in each memory block, while the word lines and the bottom source side select gate electrodes are not laterally separated in each ...