US Patent Issued to Sandisk Technologies on Dec. 23 for "Data recovery in nonvolatile memory with defective word line" (California Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,504,908, issued on Dec. 23, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Data recovery in nonvolatile memory with defective word line" was invented by Grishma Shah (Milpitas, Calif.), Rajan Paudel (Fremont, Calif.), Deepak Bharadwaj (Fremont, Calif.) and Navkiran Kaur Sandhu (Dublin, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes control circuits configured to connect to word lines that are coupled to NAND strings. The control circuits are configured to detect a defective word line, apply single word line erase voltages to the word lines to erase memory cells of the defective word line and, with the memory ...