US Patent Issued to Sandisk Technologies on Dec. 2 for "Variable read method for read time performance improvement of non-volatile memory" (American, Japanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,833, issued on Dec. 2, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Variable read method for read time performance improvement of non-volatile memory" was invented by Albert Chen (Milpitas, Calif.), Jiahui Yuan (Fremont, Calif.), Sarath Puthenthermadam (San Jose, Calif.) and Akira Okada (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus and method of operation are provided. The apparatus includes memory cells each connected to one of a plurality of word lines and disposed in memory holes each coupled to one of a plurality of bit lines. The memory cells are configured to retain a threshold voltage corr...