US Patent Issued to Sandisk Technologies on Dec. 2 for "Channel pre-charge process for memory devices using hole pre-charge operation" (California Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,842, issued on Dec. 2, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Channel pre-charge process for memory devices using hole pre-charge operation" was invented by Jonathan Huynh (San Jose, Calif.), Khanh Nguyen (San Ramon, Calif.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device includes a memory block that has a plurality of memory cells that are arranged in a plurality of word lines and in a plurality of channels. The memory device also includes circuitry that is configured to conduct a hole pre-charge operation to inject holes into the plurality of channels. During the hole pre-...