US Patent Issued to Sandisk Technologies on Dec. 16 for "Reliability improvement through delay between multi-stage programming steps in non-volatile memory structures" (California Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,499,946, issued on Dec. 16, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Reliability improvement through delay between multi-stage programming steps in non-volatile memory structures" was invented by Xue Qing Cai (Fremont, Calif.), Henry Chin (Fremont, Calif.) and Jiahui Yuan (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for multi-stage programming of a non-volatile memory structure includes the step of initiating a programming operation with respect to a memory block. The method also includes the step of applying a programming algorithm to the memory block. The programming algorithm comprises at least a firs...