ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,700,443, issued on Aug. 4, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Circuit snapback and charge diversion for cross-point arrays" was invented by Juan P. Saenz (Menlo Park, Calif.), Mark Lin (Santa Clara, Calif.) and Christopher J. Petti (Mountain View, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Technology for reading memory cells in a cross-point memory array. Each memory cell may have a threshold switching selector in series with a programmable resistance memory element. The memory system has control circuitry adjacent to the cross-bar memory array that is used to generate and deliver currents to the cross-bar memory ar...