ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,324, issued on Aug. 26, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Cross-point magnetoresistive random memory array and method of making thereof using self-aligned patterning" was invented by Jordan Katine (Mountain View, Calif.) and Lei Wan (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a cross-point array of magnetoresistive memory cells. Each magnetoresistive memory cell includes a vertical stack of a selector-containing pillar structure and a magnetic tunnel junction pillar structure. The lateral spacing between neighboring pairs of magnetoresistive memory cells may be smaller along ...