US Patent Issued to Sandisk Technologies on Aug. 25 for "Breakdown mitigation for programmable resistance memory element" (California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,858, issued on Aug. 25, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Breakdown mitigation for programmable resistance memory element" was invented by Mario Laudato (Santa Clara, Calif.), Kadriye Deniz Bozdag (Sunnyvale, Calif.), Mark Lin (Santa Clara, Calif.), Juan P. Saenz (Menlo Park, Calif.) and Dimitri Houssameddine (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technology for lowering the threshold voltage of a threshold switching selector in a programmable resistance memory cell. The memory system applies a first control signal to circuitry to establish a first resistance of transistors in series with the p...