US Patent Issued to Sandisk Technologies on Aug. 11 for "Full sequence program for edge word line quad-level memory cells" (California Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,152, issued on Aug. 11, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Full sequence program for edge word line quad-level memory cells" was invented by Sisi Yang (Campbell, Calif.) and Yanjie Wang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus and method of operation are provided. The apparatus includes memory cells each connected to one of a plurality of word lines and disposed in memory holes. The memory cells are configured to retain a threshold voltage corresponding to one of a plurality of data states. A control means is coupled to the plurality of word lines and the memory holes and is conf...