US Patent Issued to Sandisk Technologies on Aug. 11 for "Faster method to prevent hybrid single level cell defects in system" (California Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,172, issued on Aug. 11, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Faster method to prevent hybrid single level cell defects in system" was invented by Parth Amin (Fremont, Calif.), Anubhav Khandelwal (San Jose, Calif.), Mahim Gupta (San Jose, Calif.) and Piyush A. Dhotre (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus includes memory cells configured to retain a threshold voltage corresponding to data states. The memory cells are grouped into blocks and operable as one of single-level cells storing one bit of data per each of the memory cells or multi-level cells storing a plurality of bits of...