US Patent Issued to Sandisk Technologies on April 7 for "Multi-step read pass voltage discharge for ICC reduction" (California Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,473, issued on April 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Multi-step read pass voltage discharge for ICC reduction" was invented by Albert Bor Kai Chen (Milpitas, Calif.), Xiang Yang (Santa Clara, Calif.) and Jiahui Yuan (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technology is disclosed herein for a storage system and method for multi-stage discharge of a read pass voltage. In an aspect, the voltage on unselected word lines is reduced from the read pass voltage to an intermediate voltage during a first stage near the end of a read operation. A read reference voltage on the selected word line may be c...