US Patent Issued to Sandisk Technologies on April 7 for "Apparatus and method for two-step read of resistive random access memory" (California Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,596,484, issued on April 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Apparatus and method for two-step read of resistive random access memory" was invented by Deniz Bozdag (Sunnyvale, Calif.), Dimitri Houssameddine (Sunnyvale, Calif.), Juan P. Saenz (Menlo Park, Calif.) and Mark Lin (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus is provided that includes a memory array and a control circuit. The memory array includes non-volatile memory cells each including a resistive random access memory element. The control circuit is configured to receive a read command that specifies an address of a first grou...