US Patent Issued to Sandisk Technologies on April 14 for "Three-dimensional memory device containing dummy stack edge seal structure and methods for forming the same" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,469, issued on April 14, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device containing dummy stack edge seal structure and methods for forming the same" was invented by Yao Chen (Yokkaichi, Japan), Shigehisa Inoue (Yokkaichi, Japan), Kazuto Ohsawa (Yokkaichi, Japan) and Hisaya Sakai (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory die includes first and second memory-region alternating stacks of memory-region insulating layers and electrically conductive layers that are laterally spaced apart from each other by a respective first portion of a retro-stepped dielectric structure ove...